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Part NoApplication
A62S6316G-55SI 55ns; operating current40mA;standby current30uA 64K x 16bit low voltage CMOS SRAM
A290021TL-90 90ns 20mA 1uA 256K x 8bit CMOS 5.0V-only
A428316V-35U 35ns 256K x 16bit CMOS dynamic ram with EDO page mode
A43L0616AV-6 6ns; 166MHz/CL=3; 125MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
A29002T-90 90ns 20mA 1uA 256K x 8bit CMOS 5.0V-only
A42U0616V-80 80ns; refresh cycle1K; 1M x 16 CMOS dynamic RAM with EDO page mode
A67L7336E-4 Cycle time7ns; access time4ns; 128K x 32 LVTTL, pipelined DBA SRAM
A42L0616S-45 45ns 1M x 16bit CMOS dynamic ram with EDO page mode
A42L8316V-35U 35ns; 256K x 16 CMOS dynamic RAM with EDO page mode
A29800UM-55 55ns 20mA 1uA 1024K x 8bit/512 x 16bit CMOS 5.0V-only
A42L0616V-60 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
A615308V-10 10ns; operating current150mA; standby current 12mA 32K x 8bit high speed CMOS SRAM
A617308S-10 10ns; operating current150mA; standby current 12mA 128K x 8bit high speed CMOS SRAM
A42L0616V-60L 60ns 1M x 16bit CMOS dynamic ram with EDO page mode
LP621024D-55LLT 55ns; operating current70mA; standby current50uA; 128 x 8bit CMOS SRAM
A64S0616 5ns 1M x 16bit low voltage super RAM
A62S6308X-10SI 100ns; operating current40mA;standby current30uA 64K x 8bit low voltage CMOS SRAM
A29040AV-90 90ns 20mA 1uA 512K x 8bit CMOS 5.0V-only
A29DL324TV-90 90ns 2.7-3.6V 32M-bit CMOS low voltage dual operation flash memory
A63L73321E-12 12ns 128K x 32bit synchronous high speed SRAM
A43L8316AV-5 Cycle time5ns; 200MHz CL=3 access time4.5ns 128K x 16bit x 2banks synchronous DRAM
A42L8316V-35U 35ns; 256K x 16 CMOS dynamic RAM with EDO page mode
A29DL324UV-90 90ns 2.7-3.6V 32M-bit CMOS low voltage dual operation flash memory
A290011TV-55 55ns 20mA 256K x 8 OTP CMOS EPROM
A29040V-55 55ns 20mA 1uA 512K x 8bit CMOS 5.0V-only
A67L7332E-4 Cycle time7ns; access time4ns; 128K x 32 LVTTL, pipelined DBA SRAM
LP62S1024BM-55LLI 55ns; operating current30mA; standby current5uA; 128K x 8bit low voltage CMOS SRAM
A29040-55 55ns 20mA 1uA 512K x 8bit CMOS 5.0V-only

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